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Samsung MZ-V7S2T0B 970 EVO Plus NVMe Series 2TB M.2 PCI-Express 3.0 x4 Solid State Drive (V-NAND)

$359.00

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SKU: MZ-V7S2T0B Category:
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Specifications

  • Mfr Part Number: MZ-V7S2T0B/AM
  • Capacity: 2TB
  • Form Factor: M.2 2280
  • Interface: PCIe Gen 3.0 x4, NVMe 1.3
  • NAND Flash: Samsung V-NAND 3-bit MLC
  • Controller: Samsung Phoenix Controller
  • Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
  • Performance:
    • Sequential Read Speed: Up to 3,500 MB/s
    • Sequential Write Speed: Up to 3,300 MB/s
    • 4K Random Read Speed (QD1): Up to 19K IOPS
    • 4K Random Write Speed (QD1): Up to 62K IOPS
    • 4K Random Read Speed (QD32): Up to 620K IOPS
    • 4K Random Write Speed (QD32): Up to 560K IOPS
  • MTBF: 1,500,000 hours
  • Power Consumption:
    • Average: 6W
    • Maximum: 9W (Burst mode)
    • Idle: 30mW (max)
  • Shock: 1,500 G & 0.5 ms (Half sine)
  • Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
  • Weight: 8.0 g (Max)

Specifications

  • Mfr Part Number: MZ-V7S2T0B/AM
  • Capacity: 2TB
  • Form Factor: M.2 2280
  • Interface: PCIe Gen 3.0 x4, NVMe 1.3
  • NAND Flash: Samsung V-NAND 3-bit MLC
  • Controller: Samsung Phoenix Controller
  • Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
  • Performance:
    • Sequential Read Speed: Up to 3,500 MB/s
    • Sequential Write Speed: Up to 3,300 MB/s
    • 4K Random Read Speed (QD1): Up to 19K IOPS
    • 4K Random Write Speed (QD1): Up to 62K IOPS
    • 4K Random Read Speed (QD32): Up to 620K IOPS
    • 4K Random Write Speed (QD32): Up to 560K IOPS
  • MTBF: 1,500,000 hours
  • Power Consumption:
    • Average: 6W
    • Maximum: 9W (Burst mode)
    • Idle: 30mW (max)
  • Shock: 1,500 G & 0.5 ms (Half sine)
  • Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
  • Weight: 8.0 g (Max)
Weight 1 lbs
Dimensions 8 × 1 × 6 in
Condition

New

UPC

887276303765

MPN

MZ-V7S2T0B

Product Type

Brand

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