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Samsung 860 EVO MZ-M6E250BW 250GB mSATA3 Solid State Drive, Retail (Samsung V-NAND 3bit MLC)
$100.00 $76.00
(Add to cart to Buy / Request Quote)Out of stock
Key Features
- Mfr Part Number:MZ-M6E250BW
- Capacity: 250GB
- Form Factor: mSATA
- Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
- NAND Flash Memory: Samsung V-NAND 3bit MLC
- Controller: Samsung MJX Controller
- DRAM Cache Memory: 512MB LPDDR4
- Performance:
- Sequential Read Speed: 550 MB/s
- Sequential Write Speed: 520 MB/s
- 4K Random Read Speed (QD1): Up to 10K IOPS
- 4K Random Write Speed (QD1): Up to 42K IOPS
- 4K Random Read Speed (QD32): Up to 97K IOPS
- 4K Random Write Speed (QD32): Up to 88K IOPS
- MTBF: 1,500,000 hours
- Power Consumption:
- Idle (DIPM on): 50 mW
- Active Read/Write (Average): 2.2W
- Device Sleep:2 mW
- Shock: 1500G, duration – 0.5m, 3 axis (Non-Operating)
- Vibration:20~2,000Hz, 20G (Non-Operating)
- Temperature:0C to 70C (Operating); -45C to 85C (Non-Operating)
- Dimensions:
Key Features
- Mfr Part Number:MZ-M6E250BW
- Capacity: 250GB
- Form Factor: mSATA
- Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
- NAND Flash Memory: Samsung V-NAND 3bit MLC
- Controller: Samsung MJX Controller
- DRAM Cache Memory: 512MB LPDDR4
- Performance:
- Sequential Read Speed: 550 MB/s
- Sequential Write Speed: 520 MB/s
- 4K Random Read Speed (QD1): Up to 10K IOPS
- 4K Random Write Speed (QD1): Up to 42K IOPS
- 4K Random Read Speed (QD32): Up to 97K IOPS
- 4K Random Write Speed (QD32): Up to 88K IOPS
- MTBF: 1,500,000 hours
- Power Consumption:
- Idle (DIPM on): 50 mW
- Active Read/Write (Average): 2.2W
- Device Sleep:2 mW
- Shock: 1500G, duration – 0.5m, 3 axis (Non-Operating)
- Vibration:20~2,000Hz, 20G (Non-Operating)
- Temperature:0C to 70C (Operating); -45C to 85C (Non-Operating)
- Dimensions:
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