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Samsung 860 EVO MZ-M6E250BW 250GB mSATA3 Solid State Drive, Retail (Samsung V-NAND 3bit MLC)

$76.00

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Key Features

  • Mfr Part Number:MZ-M6E250BW
  • Capacity: 250GB
  • Form Factor: mSATA
  • Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
  • NAND Flash Memory: Samsung V-NAND 3bit MLC
  • Controller: Samsung MJX Controller
  • DRAM Cache Memory: 512MB LPDDR4
  • Performance:
    • Sequential Read Speed: 550 MB/s
    • Sequential Write Speed: 520 MB/s
    • 4K Random Read Speed (QD1): Up to 10K IOPS
    • 4K Random Write Speed (QD1): Up to 42K IOPS
    • 4K Random Read Speed (QD32): Up to 97K IOPS
    • 4K Random Write Speed (QD32): Up to 88K IOPS
  • MTBF: 1,500,000 hours
  • Power Consumption:
    • Idle (DIPM on): 50 mW
    • Active Read/Write (Average): 2.2W
    • Device Sleep:2 mW
  • Shock: 1500G, duration – 0.5m, 3 axis (Non-Operating)
  • Vibration:20~2,000Hz, 20G (Non-Operating)
  • Temperature:0C to 70C (Operating); -45C to 85C (Non-Operating)
  • Dimensions:

Key Features

  • Mfr Part Number:MZ-M6E250BW
  • Capacity: 250GB
  • Form Factor: mSATA
  • Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
  • NAND Flash Memory: Samsung V-NAND 3bit MLC
  • Controller: Samsung MJX Controller
  • DRAM Cache Memory: 512MB LPDDR4
  • Performance:
    • Sequential Read Speed: 550 MB/s
    • Sequential Write Speed: 520 MB/s
    • 4K Random Read Speed (QD1): Up to 10K IOPS
    • 4K Random Write Speed (QD1): Up to 42K IOPS
    • 4K Random Read Speed (QD32): Up to 97K IOPS
    • 4K Random Write Speed (QD32): Up to 88K IOPS
  • MTBF: 1,500,000 hours
  • Power Consumption:
    • Idle (DIPM on): 50 mW
    • Active Read/Write (Average): 2.2W
    • Device Sleep:2 mW
  • Shock: 1500G, duration – 0.5m, 3 axis (Non-Operating)
  • Vibration:20~2,000Hz, 20G (Non-Operating)
  • Temperature:0C to 70C (Operating); -45C to 85C (Non-Operating)
  • Dimensions:
Weight 5 lbs
Dimensions 5 × 5 × 5 in

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